Abstract

Recently, there have been efforts on developing monolithically integrated avalanche photodiodes (APDs) for visible and near-infrared (NIR) wavelengths. However, the fabrication of these detectors in commercial photonic foundries often requires custom integration flow due to many design rule violations in standard integration process. This increases the fabrication cost, hinders the use of highly robust integration platform, and prevents access to well-mature process design kits. Here, we report on waveguide-integrated APDs operating at 850 nm by utilizing a commercial silicon nitride-on-silicon-on-insulator (SiN-on-SOI) photonics platform with no process modifications. Our devices comprise a SiN waveguide for input light routing and an SOI layer underneath to form APDs. We examine the effect of different junction parameters and device length on DC and high-speed device performance. We demonstrate high gain-bandwidth product up to 120 GHz with low dark current of $\boldsymbol{< }$ 25 nA and high responsivity that can reach 0.71 A/W, and observe open eye diagrams at up to 40 Gbps for all device variations. The performance parameters are on-par or even superior when compared to other integrated APDs operating in the NIR wavelengths. Being compatible with the standard integration flow of a multi-project wafer service of a commercial foundry, our devices are readily accessible, and they expand the functionalities of well-mature SiN-on-SOI photonics platform for applications ranging from optical interconnects, LIDAR, visible light communication to biosensing and quantum applications.

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