Abstract

We present a distributed Bragg reflector-laser diode (DBR-LD) monolithically integrated with an electroabsorption modulator (EAM) offering a 100-Gb/s pulse amplitude modulation 4-level (PAM-4) signal per sub-channel under a CWDM window of 1.29 μm. For the integrated structure, the DBR-LD and EAM were implemented using a trenched waveguide in the tuning sections for achieving energy-efficient wavelength-tuning and a deep ridge waveguide with an optimized structure for a 100-Gb/s PAM-4 operation, respectively. The fabricated chip shows a threshold current of approximately 12 mA and a tuning range of greater than 13 nm, which corresponds to a wavelength band capable of supporting 16 channels with a 150-GHz grid, while maintaining a side mode suppression ratio of greater than 40 dB. In dynamic tests, the results show clear 100-Gb/s PAM-4 eye openings with an outer extinction ratio of more than 4 dB and a transmitter dispersion eye closure quaternary of less than 1.5 dB for all measured channels.

16-channel tunable and 25-Gb/s EAM-integrated DBR-LD for WDM-based mobile front-haul networks

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Up to 50 Gb/s modulation of an EAM integrated widely tunable DBR laser

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1.3-µm and 10-Gbps tunable DBR-LD for low-cost application of WDM-based mobile front haul networks

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Opt. Express 27(20) 29241-29247 (2019)

53 GBd PAM-4 fully-integrated silicon photonics transmitter with a hybrid flip-chip bonded laser

Sanghwa Yoo, Heuk Park, Jyung Chan Lee, Eun Kyu Kang, Joon Young Huh, Gye Sul Cho, Haechung Kang, Dae Woong Moon, Jong Jin Lee, and Joon Ki Lee
Opt. Express 30(23) 41980-41998 (2022)

Dual-wavelength DBR laser integrated with high-speed EAM for THz communications

Yunlong Liu, Qiang Tang, Lichen Zhang, Xiaobo La, Lingjuan Zhao, Wei Wang, and Song Liang
Opt. Express 28(7) 10542-10551 (2020)