Abstract

Mid-infrared (Mid-IR) Kerr frequency combs, which emit board, discrete, and evenly spaced laser frequencies in the spectral region of 2–20 μm, are expected to bring us tremendous applications from molecular spectroscopy to astronomy science. To develop mid-IR Kerr frequency combs, Ge has attracted significant attention due to its unique merits of a wide transparency window (2–14 μm), high refractive index (∼4), giant third-order nonlinear refractive index (∼10⁻¹⁶ m²/W), and fully CMOS-compatible device fabrication. However, it is still debatable whether Ge is an excellent material for developing Kerr frequency combs in the short-wavelength mid-IR region due to the harmful multiphoton and free-carrier absorption effects. Here, we seek to provide physical insights into the feasibility of developing mid-infrared Ge-based Kerr frequency combs around 3-μm wavelengths. Our method is based on a comprehensive model developing from a modified Lugiato-Lefever equation via taking into account high-order dispersion, multiphoton absorption, free-carrier absorption, free-carrier dispersion, and thermal-optical phase shift effect. The results show that, only with the pump wavelength of above 3.5 μm, a frequency comb could be generated by adjusting the carrier lifetime and pump power appropriately. The study is expected to provide useful guidance for developing mid-IR Kerr frequency combs by using the CMOS technology.

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