Abstract

We report parametric gain by utilizing $ \chi ^{(2)}$ non-linearities in a semiconductor Bragg Reflection Waveguide (BRW) waveguide chip. Under the two-mode degenerate type II phase matching, it can be shown that more than 18 dBs of parametric gain for both TE and TM modes is tenable in 100 s of micrometers of device length. Polarization insensitive parametric gain can be attained within the 1550 nm region of the spectrum. These AlGaAs BRW waveguides exhibit sub-photon per pulse sensitivity. This is in sharp contrast to other types of parametric gain devices which utilize $ \chi ^{(3)}$ , where the pump wavelength is in the vicinity of the signal wavelength. This sensitivity, which reached 0.1 photon/pulse, can usher a new era for on-chip quantum information processing using compact, micrometer-scale devices.

χ²-based AlGaAs phase sensitive amplifier with record gain, noise, and sensitivity

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Near-noiseless and small-footprint phase sensitive optical parametric amplifier using AlGaAs-on-insulator waveguides

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