Abstract

We discuss how InP membrane laser diodes, heterogeneously integrated on SOI can be designed for high speed operation and how one can take advantage of the heterogeneous integration. This is illustrated with several static and dynamic characteristics of fabricated 1550 nm lasers. We show nonreturn to zero on–off keying at 43 Gb/s and report link experiments over 2 km.

© 2017 IEEE

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