Abstract

In this paper, an optical controlled surface plasmonic two mode interference (SPTMI) structure based on silicon waveguide has been proposed for all optical switching. We have shown cross and bar state switching characteristics depending on additional phase between the excited SPP modes propagating through the silicon core obtained due to refractive index modulation of GaAsInP cladding with incidence of optical pulse of width ∼1 ps. It is also seen that the coupling length of the proposed device is ∼33 times compact than that of the existing multimode interference-directional coupler. The deviation of crosstalk of the SPTMI switch with increase of fabrication tolerances (±δw) is also almost to that of previously reported all optical switch.

© 2015 IEEE

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