Abstract

We propose a novel phase shifter design for carrier depletion based silicon modulators, based on an experimentally validated model. We note that the heretofore neglected effect of incomplete ionization will have a significant impact on ultra-responsive phase shifters. We predict a low $V_{\pi}L$ product of 0.31 V.cm associated with a low propagation loss of 20 dB/cm. This would enable significantly smaller Mach–Zehnder modulators to be constructed that nonetheless would have low drive voltages, with substantial decreases in insertion loss. The proposed fabrication process is of minimal complexity; in particular, no high-resolution lithographic step is required

© 2013 IEEE

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