Abstract
CMOS-compatible long-range dielectric-loaded plasmonic waveguides featuring long
propagation lengths and strong mode confinements are designed and studied using the finite-element
method. The waveguide composition includes a Si
$_{3}$
N
$_{4}$
ridge on the top of a thin metal stripe deposited on a silicon-on-insulator
(SOI) wafer with a thin top SiO
$_{2}$
layer produced by thermal oxidation. All the materials chosen in the design are
compatible with complementary metal–oxide–semiconductor technology and can be integrated with
plasmonic, electronic and photonic components. Influence of various waveguide parameters on the
waveguide characteristics is analyzed, including the thicknesses of the Si layer and the SiO
$_{2}$
layers, the dimension of the ridge, as well as the parameters of the metal
stripe. It is found that, at the telecom wavelength of 1.55 μm, the propagation length of
CMOS-plasmonic waveguides can reach 1.07 mm with a lateral mode confinement of ∼1.18 μm and
4.43 mm with a lateral mode width of ∼2.32 μm. The bending loss and coupling length are both
calculated to evaluate the applicability of the proposed device for high density integration and a
figure of merit is proposed to show the tradeoff between the propagation length and the lateral
mode width in the application of plasmonic devices.
© 2013 IEEE
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