Abstract
In this study, sputtered indium-tin-oxide (ITO) formed ITO/Au/ITO was used to form
composite transparent gate InAlAs–InGaAs metamorphic HEMTs (CTG-MHEMT), with an
optoelectronic mixer significantly markedly improved front-side optical coupling efficiency.
The proposed CTG-MHEMT exhibits a high responsivity ($\lambda =1310$ nm) of 1.71 A/W under optimal bias conditions. A ${-}3$ dB electrical bandwidth of 400 MHz is produced by the photovoltaic effect and
dominated by the long lifetime of the excess holes. The ${-}3$ dB electrical bandwidth associated with the photoconductive effect is 2.3 GHz, and
is determined mainly by the short electron life time. A power gain cut-off frequency $({\rm f}_{\max})$ of CTG-MHEMT of 18.2 GHz was achieved. This value, is much larger than that of
TG-MHEMT (14.6 GHz) because Au nano particles improved the gate resistance. The optoelectronic
mixing efficiency was enhanced by tuning the gate bias conditions. The CTG-MHEMT
optoelectronic mixer is a cost-effective device, and based on the optical and electrical
characteristics, is a promising candidate for simplifying the system architecture in
fiber-optic microwave transmission applications.
© 2010 IEEE
PDF Article
More Like This
Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with a nanodot-based floating gate
Andrew M. Armstrong, Brianna A. Klein, Andrew A. Allerman, Albert G. Baca, Mary H. Crawford, Jacob Podkaminer, Carlos R. Perez, Michael P. Siegal, Erica A. Douglas, Vincent M. Abate, and Francois Leonard
Photon. Res. 7(6) B24-B31 (2019)
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription