Abstract
This study systematically investigates the light-extraction efficiency
(LEE) of GaN-based thin-film flip-chip light-emitting diodes (TFFC LEDs) with
deeply etched photonic crystals (PhC). The optimal structure can be obtained
by scanning the structural parameters using a three-dimensional finite-difference
time-domain simulation. The concentration of the internal emission pattern
within a limited extraction cone is significantly influenced by several structural
parameters. The light-collection enhancement within an extraction cone explains
the peak LEE caused by optimized structural parameters such as the p-GaN thickness,
the air-hole depth, the lattice constant and the filling factor. The maximum
extraction efficiency can reach 65% in the case of a p-GaN thickness of 140
nm, air-hole depth of 240 nm, lattice constant of 350 nm and filling factor
of 0.40. Additionally, fabricating the optimal electrical contacts on the
planar top surface of the n side can contribute to a higher potential enhancement.
© 2013 IEEE
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