Abstract
Plasma-assisted pulsed laser deposited zirconia (ZrO<sub>2</sub>) films were studied by Fourier transform infrared (FT-IR) and Raman spectroscopy for structural characterization and thermal stability in combination with optical characterization by spectroscopic ellipsometry and optical transmission measurements. Only the monoclinic ZrO<sub>2</sub> phase was positively identified from the infrared and Raman spectra of the as-deposited ZrO<sub>2</sub> films, which show excellent optical transparency from the ultraviolet to the near infrared as revealed by optical characterization. The as-deposited ZrO<sub>2</sub> films are free of any SiO<sub>x</sub> interfacial layer when deposited on silicon. The prepared ZrO<sub>2</sub> films exhibit good thermal stability in their structural, optical, and interfacial properties up to 900 °C. Upon annealing above 1100 °C, a silicon oxide interfacial layer forms due to the oxidation of the silicon substrate surface by the oxygen diffused from the oxide film to the silicon substrate at high temperatures.
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