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Abstract
An electro-optic modulator (EOM) is an indispensable component to connect the electric and optical fields. Here, we propose a high-performance, thin-film lithium niobate-based EOM, where the modulation waveguide is formed by an etching slot on the lithium niobate film and the deposit of an ultrathin silicon film in the slot region. Therefore, a small mode size and high mode energy can be simultaneously achieved in the LN region with a high EO coefficient, which will be beneficial to increase the EO overlap and gradually decrease in the mode size. Further, we employed a waveguide structure to construct a typical Mach–Zehnder interference-type EOM. According to the requirements of high-speed traveling wave modulation, we conduct the index matching, impedance matching, and low-loss operation. From the results, the key half-wave voltage length product and 3 dB modulation bandwidth are, respectively, 1.45 V cm and 119 GHz in a modulation length of 4 mm. Moreover, a larger 3 dB bandwidth also can be achieved by shortening the modulation length. Therefore, we believe the proposed waveguide structure and EOM will provide new ways to enhance the performance of LNOI-based EOMs.
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