Abstract

Laser debonding offers several advantages such as precision, speed, minimal damage, and being noncontact. We investigated the feasibility of utilizing laser processing technology in producing high-performance ultra-thin wafer devices at a low cost. We successfully utilized the 355 nm ultraviolet nanosecond laser to develop a compatible laser debonding process for domestic temporary bonding adhesives, which effectively performed the laser lift-off of 8-in (20.3 cm) silicon/temporary bonding adhesive/glass substrate samples at a power density of ${{250}}\;{\rm{mJ/c}}{{\rm{m}}^2}$. We designed and developed a line light source shaping system that was ultimately able to produce a line spot with a length exceeding 1 cm and an energy distribution unevenness of less than 10%.

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