Abstract

The curvilinear mask structures provide significant benefits in improving lithographic resolution. Curvilinear masks, as opposed to rectilinear masks, have a wider range of structure types that can be used precisely to correct the contour of diffraction at sharp technological nodes. However, the curvilinear structure also makes the inverse design of mask in optical proximity correction (OPC) flow difficult. The current OPC of curvilinear masks uses pixel-based inverse optimization, which is extremely computationally intensive and takes up a lot of design data storage space. This paper proposes an implicit function to represent a large number of curve types with a small number of parameters to reduce computational complexity and the R&D cycle. Therefore, the ultra-high dimensional pixel-based OPC problem is transformed into a low-dimensional parameter search problem in the critical diffraction area of the mask pattern. The tabu search algorithm and neighborhood parallel computing strategy are then used to quickly search for optimal characterized parameters. The results of the simulation show that the parametric curvilinear OPC method achieves a higher image fidelity than that of rectilinear OPC. At the same time, it addresses the shortcomings of the traditional pixelated curvilinear mask OPC method, including high computational complexity, low manufacturability, and storage space occupancy.

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