Abstract
With the experimental corroboration employing a transfer matrix method, an analytical observation of optical bistability using long-range surface plasmon resonance (LRSPR) through the external magnetic field is presented for a very low threshold value. The proposed analytical method has been verified with the reported experimental data provided by Liu et al. [Curr. Appl. Phys. 29, 66 (2021) [CrossRef] ]. Now theoretical analysis is further extended in the proposed multilayered structure comprising an InAs layer sandwiched between two graphene layers, whose electromagnetic response at 2 THz can be regulated by employing a magnetic field and may tune the optical bistability without modifying the geometry or the characteristics of the structure. The observed threshold intensity for the switch-up is ${6.6615} \times {{10}^4}\;{\rm W}/{{\rm cm}^2}$ at 0.001 T; thus, this analytical approach is able to achieve 2 orders lower threshold for magnetically tunable upswitching of the optical bistable process. This suggested magnetically adjustable optical bistable arrangement gives a possibility for the comprehension of optical logic gates, optic memory, opto-transistors, and switches at a low switching threshold due to extraordinary features of the composite layers due to local field amplification of the graphene layer.
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