TiN-GST-TiN all-optical reflection modulator for the 2&#x00A0;µm wave band reaching 85% efficiency

Md Asif Hossain Bhuiyan; Md Asif Hossain Bhuiyan; Shamima Akter Mitu; Sajid Muhaimin Choudhury

doi:10.1364/AO.470247

Applied Optics
Vol. 61,
Issue 31,
pp. 9262-9270
(2022)
•https://doi.org/10.1364/AO.470247

TiN-GST-TiN all-optical reflection modulator for the 2 µm wave band reaching 85% efficiency

Md Asif Hossain Bhuiyan, Shamima Akter Mitu, and Sajid Muhaimin Choudhury

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Md Asif Hossain Bhuiyan, Shamima Akter Mitu, and Sajid Muhaimin Choudhury, "TiN-GST-TiN all-optical reflection modulator for the 2 µm wave band reaching 85% efficiency," Appl. Opt. 61, 9262-9270 (2022)

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- Fiber Optics, Fiber Sensors, and Optical Communications
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About this Article
History
- Original Manuscript: July 18, 2022
- Revised Manuscript: October 2, 2022
- Manuscript Accepted: October 2, 2022
- Published: October 28, 2022

Abstract

In this study, we present an all-optical reflection modulator for the 2 µm communication band exploiting a nanogear-array metasurface and phase-change-material ${{\rm Ge}_2}{{\rm Sb}_2}{{\rm Te}_5}$ (GST). The reflectance of the structure can be manipulated by altering the phase of GST by employing optical stimuli, and this paper provides details on the optical and opto-thermal modeling techniques of GST. A numerical investigation reveals that the metastructure exhibits a conspicuous changeover from ${\sim}99\%$ absorption to very poor interaction with the operating light depending on the switching states of the GST, ending up with 85% modulation depth and only 0.58 dB insertion loss. Due to noticeable differences in optical responses, we can demonstrate a high extinction ratio of 28 dB and a commendable figure of merit of 49, so far the best modulation performance in this wavelength window, to our knowledge. In addition, real-time tracking of reflectance during phase transition manifests high-speed switching expending low energy per cycle, of the order of sub-nJ. Hence, given its overall performance, the device will be a paradigm for optical modulators for upcoming 2 µm communication technology.

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Supplementary Material (1)

Name	Description
Supplement 1	Supplementary

Data availability

Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

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Parameter	Value (nm)	Parameter	Value (nm)
$r_{g e a r}$	130	$L_{t e e t h}$	120
$t_{g e a r}$	50	$N_{t e e t h}$	14
$t_{G S T}$	100	$W_{t e e t h}$	20
$P$	700	$t_{T i N}$	100

Device	Switching (exp./num.)^a	Extinction Ratio (dB)	Insertion Loss (dB)	FOM	Modulation Depth	Bandwidth	Bitrate (Gbps)	Operating Wavelength
${S i}_{3} N_{4} / {V O}_{2}$ -based waveguide [74]	Optical (exp.)	6.72	3.92	1.71	–	$> 100 n m$	500	1.5–1.6
PCM embedded	–	14.9	0.6	–	–	–	–	1.55
Si waveguide [75]	(exp.)	14.9	0.6	–	–	–	–	1.55
${V O}_{2}$ controlled Si waveguide [76]	Electrical (exp.)	4.984	7	0.71	–	100 nm	1	1.55
${V O}_{2}$ integrated plasmonic waveguide [77]	Optical (num.)	18.7	4.15	–	–	76	–	1.55
GST-based waveguide [78]	Electrical (num.)	8.12 (TE)	1.15 (TE)	–	–	500 nm	0.4	1.55
GST-based waveguide [78]	Electrical (num.)	1.75 (TM)	0.57 (TM)	–	–	500 nm	0.4	1.55
${V O}_{2}$ and ITO incorporated modulator [53]	Electrical (num.)	2.925	0.325	8.98	–	–	52.6	1.55
Plasmonic slot waveguide using ${V O}_{2}$ and ITO [79]	Electrical (num.)	6.36	1.13	–	–	–	–	1.55
Hybrid plasmonics ${V O}_{2}$ modulator [80]	Electrical/optical (num.)	7.6	2.8	2.7	–	$> 500 n m$	$\sim 1$ (Electrical)	1.55
Hybrid plasmonics ${V O}_{2}$ modulator [80]	Electrical/optical (num.)	7.6	2.8	2.7	–	$> 500 n m$	$> 100$ (Optical)	1.55
${V O}_{2}$ -based waveguide [81]	Optical (num.)	14.76	7.17	–	–	–	–	1.55
Metallic grating on ITO/GST [52]	Electrical (num.)	19.8	–	–	0.77		–	1.55
Proposed design	Optical (num.)	28	0.58	49	0.85	$> 400 nm$	0.05	1.95

Parameter	Value (nm)	Parameter	Value (nm)
$r_{g e a r}$	130	$L_{t e e t h}$	120
$t_{g e a r}$	50	$N_{t e e t h}$	14
$t_{G S T}$	100	$W_{t e e t h}$	20
$P$	700	$t_{T i N}$	100

Device	Switching (exp./num.)^a	Extinction Ratio (dB)	Insertion Loss (dB)	FOM	Modulation Depth	Bandwidth	Bitrate (Gbps)	Operating Wavelength
${S i}_{3} N_{4} / {V O}_{2}$ -based waveguide [74]	Optical (exp.)	6.72	3.92	1.71	–	$> 100 n m$	500	1.5–1.6
PCM embedded	–	14.9	0.6	–	–	–	–	1.55
Si waveguide [75]	(exp.)	14.9	0.6	–	–	–	–	1.55
${V O}_{2}$ controlled Si waveguide [76]	Electrical (exp.)	4.984	7	0.71	–	100 nm	1	1.55
${V O}_{2}$ integrated plasmonic waveguide [77]	Optical (num.)	18.7	4.15	–	–	76	–	1.55
GST-based waveguide [78]	Electrical (num.)	8.12 (TE)	1.15 (TE)	–	–	500 nm	0.4	1.55
GST-based waveguide [78]	Electrical (num.)	1.75 (TM)	0.57 (TM)	–	–	500 nm	0.4	1.55
${V O}_{2}$ and ITO incorporated modulator [53]	Electrical (num.)	2.925	0.325	8.98	–	–	52.6	1.55
Plasmonic slot waveguide using ${V O}_{2}$ and ITO [79]	Electrical (num.)	6.36	1.13	–	–	–	–	1.55
Hybrid plasmonics ${V O}_{2}$ modulator [80]	Electrical/optical (num.)	7.6	2.8	2.7	–	$> 500 n m$	$\sim 1$ (Electrical)	1.55
Hybrid plasmonics ${V O}_{2}$ modulator [80]	Electrical/optical (num.)	7.6	2.8	2.7	–	$> 500 n m$	$> 100$ (Optical)	1.55
${V O}_{2}$ -based waveguide [81]	Optical (num.)	14.76	7.17	–	–	–	–	1.55
Metallic grating on ITO/GST [52]	Electrical (num.)	19.8	–	–	0.77		–	1.55
Proposed design	Optical (num.)	28	0.58	49	0.85	$> 400 nm$	0.05	1.95

Md Asif Hossain Bhuiyan	https://orcid.org/0000-0002-1427-661X
Sajid Muhaimin Choudhury	https://orcid.org/0000-0002-0216-7125

Abstract

Supplementary Material (1)

Data availability

Cited By

Figures (7)

Tables (2)

Equations (7)

Applied Optics