Impact of a prestrained graded InGaN/GaN interlayer towards enhanced optical characteristics of a multi-quantum well LED based on silicon substrate

Samadrita Das; Trupti Ranjan Lenka; Fazal Ahmed Talukdar; Sharif Md. Sadaf; Ravi Teja Velpula; Hieu Pham Trung Nguyen

doi:10.1364/AO.470083

Applied Optics
Vol. 61,
Issue 30,
pp. 8951-8958
(2022)
•https://doi.org/10.1364/AO.470083

Impact of a prestrained graded InGaN/GaN interlayer towards enhanced optical characteristics of a multi-quantum well LED based on silicon substrate

Samadrita Das, Trupti Ranjan Lenka, Fazal Ahmed Talukdar, Sharif Md. Sadaf, Ravi Teja Velpula, and Hieu Pham Trung Nguyen

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Samadrita Das, Trupti Ranjan Lenka, Fazal Ahmed Talukdar, Sharif Md. Sadaf, Ravi Teja Velpula, and Hieu Pham Trung Nguyen, "Impact of a prestrained graded InGaN/GaN interlayer towards enhanced optical characteristics of a multi-quantum well LED based on silicon substrate," Appl. Opt. 61, 8951-8958 (2022)

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- Optical Devices, Sensors, and Detectors
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About this Article
History
- Original Manuscript: July 13, 2022
- Revised Manuscript: September 23, 2022
- Manuscript Accepted: September 26, 2022
- Published: October 13, 2022

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Abstract

This paper presents alternate pairs of InGaN/GaN prestrained layers with varying indium compositions, which are inserted between the GaN/InGaN MQW active region and the n-GaN layer in a light-emitting diode (LED) nanostructure in order to obtain enhanced optical characteristics. The device is mounted on a silicon substrate followed by a GaN buffer layer that promotes charge injection by minimizing the energy barrier between the electrode and active layers. The designed device attains more than 2.897% enhancement in efficiency when compared with the conventional LED, which is attributed to the reduction of a polarization field within the MQW region. The proposed device with 15% indium composition in the prestrained layer attains a maximum efficiency of 85.21% and a minimized efficiency droop of 3.848% at an injection current of 40 mA, with high luminous power in the output spectral range. The device also shows a minimum blueshift in the spectral range, indicating a decrease in the piezoelectric polarization.

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Parameter	Symbol (Unit)	GaN	AlN
Lattice constant at 300 K	$a_{0}$ ( $A^{0}$ )	3.189	3.112
Lattice constant at 300 K	$c_{0}$ ( $A^{0}$ )	5.185	4.982
Crystal-field split energy	$Δ_{c r}$ (meV)	10	−169
Spin-orbit split energy	$Δ_{s o}$ (meV)	17	19
Electron effective mass ( $c$ axis)	$m_{e}^{c} / m_{0}$	0.2	0.32
Electron effective mass (transverse)	$m_{e}^{t} / m_{0}$	0.2	0.28
Hole effective mass	$A_{1}$	−7.21	−3.86
	$A_{2}$	−0.44	−0.25
	$A_{3}$	6.68	3.58
	$A_{4}$	−3.46	−1.32
	$A_{5}$	−3.40	−1.47
	$A_{6}$	−4.90	−3.40
Elastic stiffness constant	$C_{11}$ (Gpa)	390	396
	$C_{12 (} G p a)$	145	137
	$C_{13} (G p a)$	106	108
	$C_{33} (G p a)$	398	373
	$C_{44} (G p a)$	105	116
Mg-activation energy	(meV)	170	510
Piezoelectric constants	$e_{33} (C / m^{2})$	0.73	1.46
Piezoelectric constants	$e_{31} (C / m^{2})$	−0.49	−0.60
Si-activation energy	(meV)	15	250
Hydrostatic deformation potential ( $c$ axis)	$a_{z}$ (eV)	−4.9	−3.4
Hydrostatic deformation potential (transverse)	$a_{t}$ (eV)	−11.3	−11.8

CBBH	${L E D}_{1}$	${L E D}_{2}$	${L E D}_{3}$	$V B B H$	${L E D}_{1}$	${L E D}_{2}$	${L E D}_{3}$
$Φ_{e 1}$	174.43	274.67	339.24	$Φ_{h 1}$	89.55	212.05	145.76
$Φ_{e 2}$	157.89	217.51	363.19	$Φ_{h 2}$	109.94	175.36	336.10
$Φ_{e 3}$	162.38	228.23	385.34	$Φ_{h 3}$	110.37	172.99	358.01
$Φ_{e 4}$	166.46	238.19	392.93	$Φ_{h 4}$	110.54	186.11	337.69
$Φ_{E B L}$	342.94	524.79	756.57

Parameters	${L E D}_{1}$	${L E D}_{2}$	${L E D}_{3}$
Electron concentration ( ${c m}^{- 3}$ ) at 2nd QW	$4.86 \times 10^{18}$	$7.754 \times 10^{18}$	$5.95 \times 10^{19}$
Hole concentration ( ${c m}^{- 3}$ ) at 2nd QW	$5.93 \times 10^{18}$	$8.064 \times 10^{18}$	$6.591 \times 10^{19}$
EQE (%) at 40 mA	20.95	38.16	65.43
Droop (%)	29.56	9.306	3.848
Power (mW)	3.12	5.74	9.77
Current density ( $A / {c m}^{2}$ )	9.26	7.24	10.3
Recombination rate at 2nd QW ( ${c m}^{- 3} s^{- 1}$ )	$16.3 \times 10^{25}$	$32.7 \times 10^{26}$	$51.1 \times 10^{26}$

Parameter	Symbol (Unit)	GaN	AlN
Lattice constant at 300 K	$a_{0}$ ( $A^{0}$ )	3.189	3.112
Lattice constant at 300 K	$c_{0}$ ( $A^{0}$ )	5.185	4.982
Crystal-field split energy	$Δ_{c r}$ (meV)	10	−169
Spin-orbit split energy	$Δ_{s o}$ (meV)	17	19
Electron effective mass ( $c$ axis)	$m_{e}^{c} / m_{0}$	0.2	0.32
Electron effective mass (transverse)	$m_{e}^{t} / m_{0}$	0.2	0.28
Hole effective mass	$A_{1}$	−7.21	−3.86
	$A_{2}$	−0.44	−0.25
	$A_{3}$	6.68	3.58
	$A_{4}$	−3.46	−1.32
	$A_{5}$	−3.40	−1.47
	$A_{6}$	−4.90	−3.40
Elastic stiffness constant	$C_{11}$ (Gpa)	390	396
	$C_{12 (} G p a)$	145	137
	$C_{13} (G p a)$	106	108
	$C_{33} (G p a)$	398	373
	$C_{44} (G p a)$	105	116
Mg-activation energy	(meV)	170	510
Piezoelectric constants	$e_{33} (C / m^{2})$	0.73	1.46
Piezoelectric constants	$e_{31} (C / m^{2})$	−0.49	−0.60
Si-activation energy	(meV)	15	250
Hydrostatic deformation potential ( $c$ axis)	$a_{z}$ (eV)	−4.9	−3.4
Hydrostatic deformation potential (transverse)	$a_{t}$ (eV)	−11.3	−11.8

CBBH	${L E D}_{1}$	${L E D}_{2}$	${L E D}_{3}$	$V B B H$	${L E D}_{1}$	${L E D}_{2}$	${L E D}_{3}$
$Φ_{e 1}$	174.43	274.67	339.24	$Φ_{h 1}$	89.55	212.05	145.76
$Φ_{e 2}$	157.89	217.51	363.19	$Φ_{h 2}$	109.94	175.36	336.10
$Φ_{e 3}$	162.38	228.23	385.34	$Φ_{h 3}$	110.37	172.99	358.01
$Φ_{e 4}$	166.46	238.19	392.93	$Φ_{h 4}$	110.54	186.11	337.69
$Φ_{E B L}$	342.94	524.79	756.57

Samadrita Das	https://orcid.org/0000-0001-8624-2171
Trupti Ranjan Lenka	https://orcid.org/0000-0002-8002-3901
Ravi Teja Velpula	https://orcid.org/0000-0001-7630-4746
Hieu Pham Trung Nguyen	https://orcid.org/0000-0003-1129-9581

Abstract

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Tables (3)

Equations (2)

Applied Optics