CMOS-compatible, broadband, and polarization-independent edge coupler for efficient chip coupling with standard single-mode fiber

Linghua Wang; Fengyang Han; Huaixi Chen; Huaixi Chen; Jiwei Huang; Yazhen Zhang; Xinbin Zhang; Xinkai Feng; Rongshan Wei; Shaohao Wang; Minmin Zhu

doi:10.1364/AO.471180

Applied Optics
Vol. 61,
Issue 26,
pp. 7798-7806
(2022)
•https://doi.org/10.1364/AO.471180

CMOS-compatible, broadband, and polarization-independent edge coupler for efficient chip coupling with standard single-mode fiber

Linghua Wang, Fengyang Han, Huaixi Chen, Jiwei Huang, Yazhen Zhang, Xinbin Zhang, Xinkai Feng, Rongshan Wei, Shaohao Wang, and Minmin Zhu

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Linghua Wang, Fengyang Han, Huaixi Chen, Jiwei Huang, Yazhen Zhang, Xinbin Zhang, Xinkai Feng, Rongshan Wei, Shaohao Wang, and Minmin Zhu, "CMOS-compatible, broadband, and polarization-independent edge coupler for efficient chip coupling with standard single-mode fiber," Appl. Opt. 61, 7798-7806 (2022)

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Abstract

A CMOS-compatible, broadband, and polarization-independent edge coupler for efficient chip coupling with standard single-mode fiber is proposed. Three layers of a silicon nitride waveguide array with the same structures are used in the top oxide cladding of the chip to achieve high coupling efficiency and to simplify the mode transformation structure. Optimal total coupling loss at the wavelength of 1550 nm, ${-}{0.49}\;{\rm dB}$ for TE mode polarization and ${-}{0.92}\;{\rm dB}$ for TM mode polarization is obtained. The ${-}{1}\;{\rm dB}$ bandwidth is beyond 160 nm for TE mode polarization and ${\sim}{130}\;{\rm nm}$ for TM mode polarization, respectively. A significant reduction in the packaging cost of silicon photonic chips is anticipated. Meanwhile, the structure holds vast potential for on-chip three-dimensional photonic integrations or fiber-to-chip, chip-to-chip optical interconnections.

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Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

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Parameters	For SMF	For DFB Laser
$w_{S i}$ (nm)	150	150
$h_{S i}$ (nm)	150	150
$h_{S i N}$ (nm)	200	200
$w_{S i N}$ (nm)	200	370
$g_{S i N}$ (nm)	560	400
$t_{1}$ (µm)	1.0	0.2
$t_{2}$ (µm)	2.56	NA
$t_{3}$ (µm)	2.7	NA
row number	3	1
column number	13	7

Ref.	MFD (µm)	Total Loss (dB)	Bandwidth (nm)	Minimum Dimension (nm)	Total length (µm)	Experiment or not
[15]	3	−0.92 (TE)/−0.94 (TM)	NA	100 (Si)	150	Yes
[24]	$3.24 \times 1.74$	−0.42 (TE)	415 nm (1 dB BW, to maximum)	150 (Si)	90	Not
[20]	5	−1.91 (TE)/1.61 (TM)	NA	150 (Si)	30	Yes
[18]	6	−1.25 (TE)	114 (2 dB BW)	100 (Si)	55	Yes
[16]	6.5	−0.35 (TE)	95 nm (1 dB BW)	120 (Si)	300	Yes
[21]	6.6	−0.6 (TE)/−1.0 (TM)	$> 100$	80 (Si)	NA	Yes
[12]	10.4	−0.75 (TE)	$> 150$ (0.5 dB BW)	150 (Si), 30 nm (SiN, thickness)	1500	Not
[17]	10.4	−3.6 (TE)/−4.2 (TM)	$\sim 100$ (1 dB BW, to maximum)	100 (Si)	850	Yes
[14]	10.4	−3.0 (TE)/−4.0 (TM)	$> 100$ (1 dB BW, to maximum)	150 (SiN)	$> 300$	Yes
[13]	10.4	−0.71 (TE)/−0.48 (TM)	$> 100 n m$ (1 dB BW)	150 (Si)	1870	Not
[26]	10.4	−0.55 (TE)/−0.65 (TM)	230 nm (1 dB BW, TE) /100 nm (1 dB BW, TM)	100 nm (SiN)	$> 500$	Yes
Ours	10.4	−0.49 (TE)/−0.92 (TM)	$> 160 n m$ $(1 d B B W, T E) / \sim 130 n m$ (1 dB BW, TM)	150 nm (Si), 200 nm (SiN)	1200	Not

Parameters	For SMF	For DFB Laser
$w_{S i}$ (nm)	150	150
$h_{S i}$ (nm)	150	150
$h_{S i N}$ (nm)	200	200
$w_{S i N}$ (nm)	200	370
$g_{S i N}$ (nm)	560	400
$t_{1}$ (µm)	1.0	0.2
$t_{2}$ (µm)	2.56	NA
$t_{3}$ (µm)	2.7	NA
row number	3	1
column number	13	7

Ref.	MFD (µm)	Total Loss (dB)	Bandwidth (nm)	Minimum Dimension (nm)	Total length (µm)	Experiment or not
[15]	3	−0.92 (TE)/−0.94 (TM)	NA	100 (Si)	150	Yes
[24]	$3.24 \times 1.74$	−0.42 (TE)	415 nm (1 dB BW, to maximum)	150 (Si)	90	Not
[20]	5	−1.91 (TE)/1.61 (TM)	NA	150 (Si)	30	Yes
[18]	6	−1.25 (TE)	114 (2 dB BW)	100 (Si)	55	Yes
[16]	6.5	−0.35 (TE)	95 nm (1 dB BW)	120 (Si)	300	Yes
[21]	6.6	−0.6 (TE)/−1.0 (TM)	$> 100$	80 (Si)	NA	Yes
[12]	10.4	−0.75 (TE)	$> 150$ (0.5 dB BW)	150 (Si), 30 nm (SiN, thickness)	1500	Not
[17]	10.4	−3.6 (TE)/−4.2 (TM)	$\sim 100$ (1 dB BW, to maximum)	100 (Si)	850	Yes
[14]	10.4	−3.0 (TE)/−4.0 (TM)	$> 100$ (1 dB BW, to maximum)	150 (SiN)	$> 300$	Yes
[13]	10.4	−0.71 (TE)/−0.48 (TM)	$> 100 n m$ (1 dB BW)	150 (Si)	1870	Not
[26]	10.4	−0.55 (TE)/−0.65 (TM)	230 nm (1 dB BW, TE) /100 nm (1 dB BW, TM)	100 nm (SiN)	$> 500$	Yes
Ours	10.4	−0.49 (TE)/−0.92 (TM)	$> 160 n m$ $(1 d B B W, T E) / \sim 130 n m$ (1 dB BW, TM)	150 nm (Si), 200 nm (SiN)	1200	Not

Abstract

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Applied Optics