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Side edge emission from a waveguide substrate

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Abstract

In this study, we fabricated embedded titanium dioxide (${{\rm TiO} _{2}})$ nanograting structures with slanted cross section on a silicon dioxide (${{\rm SiO} _{2}})$ substrate using electron beam lithography (EBL) and reactive ion etching (RIE) methods, and we analyzed their optical signals. The surface morphologies of the embedded ${{\rm TiO} _{2}}$ nanograting structures were monitored by a scanning optical microscope (SEM). By focusing the transverse electric (TE) polarized beam with the wavelength $\lambda = {633}\;{\rm nm}$ at the incident angle $\theta = {22.0}^\circ$ from the rear side of ${{\rm TiO} _{2}}$ face, we could observe $+{1}$st and $-{2}$nd diffraction orders with diffraction efficiencies (${I}/{{I}_{\rm total}}$): ${I}_1 = {23}\%$ and ${I}_2 = {19}\%$, respectively, on a ${{\rm SiO}_{2}}/{{\rm TiO}_{2}}$ interface. Diffraction beams were waveguided to both left and right directions in a ${{\rm SiO} _{2}}$ substrate via total internal reflection (TIR); next, two guided beams were emitted from the side edges of the substrate. This work is expected to develop a highly efficient two-way waveguide optical interconnector.

© 2021 Optical Society of America

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Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

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