Abstract
Although high-resistivity, low-loss silicon is an excellent material for terahertz transmission optics, its high refractive index necessitates an antireflection treatment. We fabricated a wide-bandwidth, two-layer antireflection treatment by cutting subwavelength structures into the silicon surface using multi-depth deep reactive-ion etching (DRIE). A wafer with this treatment on both sides has () reflectance over 187–317 GHz at a 15° angle of incidence in TE polarization. We also demonstrated that bonding wafers introduce no reflection features above the level (also in TE at 15°), reproducing previous work. Together these developments immediately enable construction of wide-bandwidth silicon vacuum windows and represent two important steps toward gradient-index silicon optics with integral broadband antireflection treatment.
© 2018 Optical Society of America
Full Article | PDF ArticleMore Like This
Patricio A. Gallardo, Brian J. Koopman, Nicholas F. Cothard, Sarah Marie M. Bruno, German Cortes-Medellin, Galen Marchetti, Kevin H. Miller, Brenna Mockler, Michael D. Niemack, Gordon Stacey, and Edward J. Wollack
Appl. Opt. 56(10) 2796-2803 (2017)
A. Brahm, S. Döring, A. Wilms, G. Notni, S. Nolte, and A. Tünnermann
Appl. Opt. 53(13) 2886-2891 (2014)
R. Datta, C. D. Munson, M. D. Niemack, J. J. McMahon, J. Britton, E. J. Wollack, J. Beall, M. J. Devlin, J. Fowler, P. Gallardo, J. Hubmayr, K. Irwin, L. Newburgh, J. P. Nibarger, L. Page, M. A. Quijada, B. L. Schmitt, S. T. Staggs, R. Thornton, and L. Zhang
Appl. Opt. 52(36) 8747-8758 (2013)