Abstract
A resonant-cavity-enhanced photodiode with broad filter transmittance and high quantum efficiency was numerically designed and analyzed, fabricated, and validated experimentally. We show theoretically that the quantum-efficiency spectrum broadens because of anomalous dispersion of the reflection phase of a mirror in the device and describe conditions that allow maximal flatness of the transmitted spectrum to be achieved. To demonstrate the concepts we design, fabricate, and characterize a backilluminated In0.47Ga0.53As-based p-i-n photodiode upon a InP substrate. Experimental measurements of the fabricated devices demonstrate a peak quantum efficiency of 0.80 at 1550 nm and a FWHM of transmittance of 35.96 nm.
© 2005 Optical Society of America
Full Article | PDF ArticleMore Like This
Mingyue Guan and Connie Chang-Hasnain
Opt. Express 30(6) 9298-9306 (2022)
Kai Liu, Yongqing Huang, and Xiaomin Ren
Appl. Opt. 39(24) 4263-4269 (2000)
Chyong-Hua Chen, Kevin Tetz, Wataru Nakagawa, and Yeshaiahu Fainman
Appl. Opt. 44(8) 1503-1511 (2005)