Abstract

Amorphous chalcogenide films are evaluated holographically as inorganic resists. In particular, the resolution of As2S3 films is determined experimentally. The exposure characteristics of As2S3 films for holographic storage and lithographic pattern generation are studied. An empirical model is discussed. Light diffraction for in situ monitoring of process conditions is employed, covering the Raman-Nath and Bragg regimes. The modulation transfer function of As2S3 inorganic photoresists is presented. A minimum feature dimension of 100 nm delineated in As2S3 is obtained.

© 1979 Optical Society of America

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