Femtosecond Relaxation of the Excited Carriers in CdSexSl-x Doped Glass Produced by High-Intensity Laser Pulse

S.V. Chekalin; V.M. Farztdinov; Yu.E. Lozovik; Yu.A. Matveetz; A.G. Stepanov; A.P. Yartsev

doi:10.1364/UP.1990.PDP4

Ultrafast Phenomena
Technical Digest Series (Optica Publishing Group, 1990),
paper PDP4
•https://doi.org/10.1364/UP.1990.PDP4

Femtosecond Relaxation of the Excited Carriers in CdSe_xS_l-x Doped Glass Produced by High-Intensity Laser Pulse

S.V. Chekalin, V.M. Farztdinov, Yu.E. Lozovik, Yu.A. Matveetz, A.G. Stepanov, and A.P. Yartsev

International Conference on Ultrafast Phenomena 1990

Monterey, California United States
14–17 May 1990
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S. V. Chekalin, V. M. Farztdinov, Y. E. Lozovik, Y. A. Matveetz, A. G. Stepanov, and A. P. Yartsev, "Femtosecond Relaxation of the Excited Carriers in CdSexSl-x Doped Glass Produced by High-Intensity Laser Pulse," in Ultrafast Phenomena, Technical Digest Series (Optica Publishing Group, 1990), paper PDP4.

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Abstract

Carrier relaxation in semiconductor-doped glasses incorporating small (R~100 Å) CdSe_xS_l-x crystallites in a glass matrix was investigated previously at carrier density up to 10¹⁸cm^-3 [1,2]. It was found that the relaxation time depends strongly on the level of the excitation above the band gap [1].

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