Abstract

Improved all-epitaxial processing of orientation-patterned OP-GaAs and OP-GaP, advances in size and quality of ZnGeP₂ and CdSiP₂, and the advent of BaGa₄S₇, BaGa₄S₇, and their quaternary analogues, are extending ultrafast laser output deep into the mid-infrared. Here we report on growth, processing, properties, device performance, and search for new materials.

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