Si/SiO2 single quantum wells and quantum dot layers were prepared under ultrahigh vacuum conditions and studied with respect to possible photovoltaic applications. The detection of a photocurrent in such structures is demonstrated. Its spectral dependence correlates with the respective structural properties. Internal quantum efficiencies of photoconductivity and, thus, carrier mobilities and lifetimes, are strongly affected by Si/SiO2 interface states and were enhanced upon hydrogen treatment due to passivation of interface gap states.

© 2008 Optical Society of America

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