Abstract

A facility for research associated with the pursuit of extreme ultraviolet (EUV) and soft x-ray (SXR) projection lithography is proposed. The facility would be based on unique opportunities for research in science, and technology due to the availability of high-brightness, partially coherent radiation at wavelengths extending from 140 Å to 40 A from an undulator at the Advanced Light Source (ALS). The large flux of radiation from the undulator poses serious problems for the optical components in the beamline. A major aspect of the research proposed herein is to develop a facility which permits the detailed characterization of complex, high-numerical-aperture multilayer coated optical surfaces with regard to their deviation from ideal as-prescribed shapes.

© 1993 Optical Society of America