Abstract

This paper explores the development of a Silicon/PLZT on Sapphire Spatial Light Modulator using R-F magnetron sputtered thin film PLZT. Lead Lanthanum Zirconate Titanate (PLZT) is a transparent ferroelectric material exhibiting large quadratic electro-optic effect ^[1]. Sapphire forms an excellent choice as substrate to build high density Silicon-on-Sapphire CMOS circuits. By growing PLZT films on sapphire one can create Silicon-based Smart Spatial Light Modulators (S-SLMs). Fig.1 shows the configuration of such a device. The thin film PLZT transverse light modulators offer attractive features such as high speeds (due to low intrinsic capacitance) and low switching energies when used in a Fabry-Perot interferometer. In addition, since silicon device development is done prior to the deposition of PLZT films, CMOS VLSI circuits of any complexity can be achieved on the sapphire substrate in standard CMOS foundries. The most important step in the creation of such a device, is the growth of PLZT films of the right composition and crystallinity. In this paper we report the characterization of PLZT(9/65/35) films deposited on R plane $(1\overline{1}02)$ sapphire. PLZT (9/65/35) composition was chosen for its large quadratic electro-optic coefficient. R-plane $(1\overline{1}02)$ sapphire was chosen as substrate to provide compatibility with Silicon-on Sapphire technology.

© 1990 Optical Society of America