We report on |χ(3)| and population grating lifetime measurements performed on thick InN samples. We study the possibility of using this semiconductor for slow light applications considering linear and non-linear absorption near band-gap wavelengths (~1500 nm). Results show the importance of considering linear absorption to estimate the induced change in group index.

© 2007 Optical Society of America

PDF Article


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access OSA Member Subscription