Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Quantum Mechanical Capacitance in a Scanning Tunneling Microscope

Not Accessible

Your library or personal account may give you access

Abstract

One of the most spectacular manifestations of quantum mechanics is tunneling between closely spaced conductors. The DC I-V characteristics in different types of tunnel junctions, such as metal-vacuum-metal junctions (MVM), metal-insulator-metal junctions (MIM), Josephson junctions, and quantum point contacts in a two dimensional electron gas, are well understood. High frequency transport in these systems is much less understood, and has been the subject of intense research in recent years[1,2].

© 1995 Optical Society of America

PDF Article
More Like This
STOEM: Scanning Tunneling Optoelectronic Microscope

Koichiro Takeuchi and Akira Mizuhara
JWA4 Quantum Optoelectronics (QOE) 1995

Near-field optical properties of GaAs quantum dot structures measured by photon scanning tunnelling microscope

Yasunori Toda, Motonobu Kourogi, Yasushi Nagamune, Yasuhiko Arakawa, and Motoichi Ohtsu
FA3 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 1995

What is measured in a picosecond optoelectronically gated scanning tunneling microscope ?

Rogier H. M. Groencveld and H. van Kempen
QThI1 European Quantum Electronics Conference (EQEC) 1996

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.