Abstract

It has recently been shown that various important laser characteristics are improved by adopting the strained MQW (SMQW) structure. In the case of visible AlGaInP lasers for use in the optical disk systems, high-power operation of the fundamental transverse-mode is an important requirement. Stable high output around 30 mW has already been attained using compressively strained QWs [1][2]. Compressive strain is introduced by increasing the In content of the GaInP alloy. This brings about a decrease in bandgap energy of the active region, which causes a large potential barrier that confines the injected carriers. In fact, the wavelength red-shift caused by the compressive strain can reduce threshold currents [3].

© 1993 Optical Society of America