Abstract

Heavily implanted MQW structures have not been examined as a function of applied bias in a pin geometry. Such studies address the interesting physical question of whether phenomena such as sharp excitons and quantum confined stark effect (QCSE), normally associated with ultra-clean material can persist amid the controlled introduction of defects.[1] We have studied several such MQW pin samples, each of which was grown on a quarter-wave dielectric reflecting stack mirror consisting of Al_0.11Ga_0.89As and AlAs layers. Devices contained 60 periods of GaAs quantum wells 100 Å thick with 60 Å Al_xGa_1-xAs barriers having mole fractions of x=0.3, 0.45, and 1.0. Devices were implanted with roughly 130 keV protons, focusing the damage into the intrinsic regions, to dose levels of 1 × 10¹²cm⁻², 1 × 10¹³cm⁻², and 1 × 10¹⁴cm⁻². Large-area mesa devices were then fabricated from these structures via standard lithographic techniques. We have previously reported the behavior of x=0.3 barrier samples.[2]

© 1993 Optical Society of America