Abstract
We demonstrate here that it is experimentally practical to employ the realtime THz probes to access an equilibrium electron gas in a semiconductor heterostructure at a low temperature and magnetic field, and study the response of a 2D electron gas to picosecond transient electric fields in an n-type MQW GaAs/GaAlAs structure. The experimental arrangement is shown in the upper trace of Figure 1. The collimated beam passes a free standing wire grid polarized and is subsequently focused inside a superconducting magnet onto a sample (with a spot size of approximately 6 mm). The crossed polarizer (power) extinction ratio was about 4x10-4. The average power in the THz beam was measured by a bolometer to be approximately 1 nW, corresponding to an average flux of 104-105 photons/cm2 per pulse incident of the samples.
© 1993 Optical Society of America
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