Abstract

First room temperature mid-IR lasing due to intra-shell transitions in the doped semiconductor nanocrystals (NC) is reported. The 27nm Cr:ZnS NCs oscillate at 2200 nm with 325 mJ/cm2 laser threshold. Temperature dependence of photoluminescence decay, lasing threshold and lasing wavelength maxima of Cr:ZnS NCs are studied.

© 2008 Optical Society of America

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