Abstract
Recently, there has been much interests in InGaN/GaN multiple-quantum-well (MQW) structures due to their applicability as optoelectronic devices such as light-emitting diodes. (LEDs) and laser diodes.1 Their ultrafast and physical properties are also of significant interests. Anomalously large acoustic phonon oscillations have been observed using ultrafast lasers in InGaN MQWs.2
© 2001 Optical Society of America
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