Ultrafast recovery of all-optical modulation in passive InGaAs/InGaAsP multiple-quantum-well waveguides

H. K. Tsang; P. A. Snow; I. E. Day; I. H. White; R. V. Penty; R. S. Grant; R. S. Grant; Z. Su; Z. Su; G. T. Kennedy; G. T. Kennedy; W. Sibbelt; W. Sibbelt

Quantum Electronics and Laser Science Conference
OSA Technical Digest (Optica Publishing Group, 1993),
paper QThA3

Ultrafast recovery of all-optical modulation in passive InGaAs/InGaAsP multiple-quantum-well waveguides

H. K. Tsang, P. A. Snow, I. E. Day, I. H. White, R. V. Penty, R. S. Grant, Z. Su, G. T. Kennedy, and W. Sibbelt

Quantum Electronics and Laser Science Conference 1993

Baltimore, Maryland United States
2–7 May 1993
ISBN: 1-55752-302-9

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Semiconductor Nonlinearities (QThA)

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H. K. Tsang, P. A. Snow, I. E. Day, I. H. White, R. V. Penty, R. S. Grant, Z. Su, G. T. Kennedy, and W. Sibbelt, "Ultrafast recovery of all-optical modulation in passive InGaAs/InGaAsP multiple-quantum-well waveguides," in Quantum Electronics and Laser Science Conference, D. Auston, D. Steel, T. Heinz, and G. Stegeman, eds., Vol. 12 of OSA Technical Digest (Optica Publishing Group, 1993), paper QThA3.

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Abstract

We investigate the direct use of two-photon absorption (TPA) for ultrafast all-optical switching by measuring the switching intensities, recovery times, and modulation depths obtainable from TPA in a waveguide. The measurements were performed on a 600-μm-long, antireflection-coated, p-i-n ridge waveguide. The waveguide was 0.27 μm thick and had five 6-nm-thick InGaAs quantum wells (1.48-μm peak absorption wave length) separated by 10-nm-thick InGaAsP barriers (1.15-μm band-gap composition). Figure 1 shows the experimental setup. Pulses of-200 fs FWHM were split 200:1 for the pump-probe measurements.

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