Abstract
The new short-wavelength, all-molecular-beam-epitaxy (MBE) laser has a vertical positive-intrinsic-negative junction with bottom and top mirrors. The Si-doped bottom mirror has 28.5 pairs of an AlAs/Al0.65Ga0 35AS/Al0.3Ga0.7As/Al0.63Ga0.35As quarter-wave stack designed at 780 nm. The undoped spacer region consists of an Al0.14Ga0.86As superlattice sandwiched between two graded AlGaAs (x = 0.3 — 0 65) layers so that the combined optical thickness is a full wave.
© 1991 Optical Society of America
PDF ArticleMore Like This
K. TAI, Y. H. WANG, J. D. WYNN, M. HONG, R. J. FISCHER, J. M. MANNAERTS, and A. Y. CHO
CFF5 Conference on Lasers and Electro-Optics (CLEO:S&I) 1990
C. J. Chang-Hasnain, J. P. Harbison, C. E. Zah, L. T. Florez, N. C. Andreadakis, and T. P. Lee
TuF3 Optical Fiber Communication Conference (OFC) 1991
R.P. Bryan, R.P. Schneider, J.A. Lott, and G.R. Olbright
PD27 OSA Annual Meeting (FIO) 1991