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Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1989),
  • paper THBB4

Hot carriers in Ga0.47In0.53As/ Al0.48In0.52As multiple quantum well structures studied by picosecond infrared spectroscopy

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Abstract

Hot carrier relaxation in ternary quantum well (QW) structures has been studied extensively to clarity the mechanism of intersubband scattering and cooling.1-3 Here we report on an investigation of transient absorption spectra in intrinsic and n-doped GaInAs/AlInAs multiple quantum well (MQW) structures to monitor the time-dependent carrier distribution function and determine the relaxation Kinetics.

© 1989 Optical Society of America

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