Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1989),
  • paper JL4

Exciton ionization dynamics of InGaAs quantum wells

Not Accessible

Your library or personal account may give you access

Abstract

Excitons in III–V quantum wells (QWs) are strongly coupled to polar longitudinal optical (LO) phonons. The binding energies of the quasi 2-D excitons (Eb ≈ 1-10 meV) are smaller than the energies of the LO phonons (ħΩLO ≈ 30-40 meV). Excitons are thus unstable against LO-phonon collisions which can ionize them and release a free electron hole pair with substantial excess energy. It is clear that this process is temperature dependent. At high temperature the collision rate increases and the excitonic lifetime is reduced significantly.

© 1989 Optical Society of America

PDF Article
More Like This
Femtosecond dynamics of excitonic absorption in the infrared InGaAs quantum wells

M. Wegener, I. Bar-Joseph, G. Sucha, M.N. Islam, N. Sauer, T.Y. Chang, and D.S. Chemla
MB4 Quantum Wells for Optics and Opto-Electronics (QWOE) 1989

Excitonic Behavior in Pseudomorphic InGaAs/(Al)GaAs Quantum Wells Grown by Mbe

D.E. Ackley, C. Colvard, H. Lee, and N. Nouri
TuE5 Quantum Wells for Optics and Opto-Electronics (QWOE) 1989

Femtosecond Exciton Dynamics of II-VI Semiconductor Multiple Quantum Wells (Invited)

Anthony M. Johnson
TPLS2 Inaugural Forum for the Research Center for Optical Physics (RCOP) 1993

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved