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Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1989),
  • paper JI4

Single picosecond pulse generation in low temperature MBE grown GaAs photoconductors

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Abstract

We study the generation of the shortest electrical pulses to date from GaAs-based photoconductors. Typical pulse durations are in the 1-2-ps regime (see Fig. 1). The photoconductive material is produced by low temperature MBE growth and exhibits an unusually high mobility (~200 cm2/V s) for picosecond pulsed photoconductive materials. The pulses were generated using a photoconductive gap in a high speed coplanar transmission line geometry and measured by an external electrooptic sampling technique.

© 1989 Optical Society of America

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