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Top- and Bottom-Patterned GaN/InGaN Violet Light Emitting Diode Structure for Enhanced Light Extraction

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Abstract

Micro-patterning is carried out on top-surface of GaN/InGaN violet LEDs grown on patterned sapphire substrates (PSS). Electro-luminescence/ light-output of hexagonal hole-type and grating-type LEDs are found 1.8/2.0 and 1.4/1.5 times higher compared to conventional LED respectively.

© 2014 Optical Society of America

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