Abstract
GaN/InGaN based light-emitting diode (LED) is designed exploiting the recently-discovered polarization-induced doping phenomena in III-nitride semiconductors. LED structure employing InGaN barrier, combined with the polarization-induced doped electron-blocking layer (EBL) shows promising results.
© 2012 Optical Society of America
PDF ArticleMore Like This
Jinhui Tong and Shuti Li
AS3F.5 Asia Communications and Photonics Conference (ACP) 2012
Da-Wei Lin, Chao-Hsun Wang, Shih-Pang Chang, Ching-Hsueh Chiu, Yu-Pin Lan, Zhen-Yu Li, Jin-Chai Li, Tien-Chang Lu, Shing-Chung Wang, and Hao-Chung Kuo
AS3F.4 Asia Communications and Photonics Conference (ACP) 2012
Sheng-Wen Wang, Da-Wei Lin, Chia-Yu Lee, Che-Yu Liu, Yu-Pin Lan, Hao-Chung Kuo, and Shing-Chung Wang
JW2A.94 CLEO: Applications and Technology (CLEO:A&T) 2013