1064 nm infrared laser ablation of silicon wafer with a water film flowing through the ablated spot

Jianhui Gu

Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies
Technical Digest (CD) (Optica Publishing Group, 2004),
paper PThA2

1064 nm infrared laser ablation of silicon wafer with a water film flowing through the ablated spot

Jianhui Gu

Photonic Applications Systems Technologies Conference 2004

San Francisco, California United States
ISBN: 1-55752-770-9

From the session
Lasers in Manufacturing V (PThA)

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J. Gu, "1064 nm infrared laser ablation of silicon wafer with a water film flowing through the ablated spot," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optica Publishing Group, 2004), paper PThA2.

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Abstract

With a water film flowing through the ablated spot, 1064 nm infrared laser ablation of silicon wafer demonstrated material volume removal rate of 0.2 mm³/sec and a small heat-affected-zone for wafer slotting.

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