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Near and Mid-Infrared Light-Emitting Diodes Based on Solution-Processable Semiconductors

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Abstract

We will discuss recent work aimed at developing efficient infrared light-emitting diodes (LEDs) based on organic semiconductors and black phosphorus (BP). We have realized a fluorescent organic light-emitting diode emitting at λ = 840 nm, with a maximum EQE of 3.8%, which is a record for this class of devices. We have also realized the first BP LED, which emits at λ = 3.7 µm, with an IQE of 1%.

© 2022 The Author(s)

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