Abstract

In recent years, study has been made of the photorefractive effect in semi-insulating GaAs, both Cr- doped(1,3,4) and with EL2 centres(2). The motivation for examining this effect has been the faster response time of GaAs compared with other photorefractive materials such as Bi₁₂SiO₂₀ or BaTiO₃ (5). Also, its operation at near infra-red wavelengths with semiconductor lasers opens up possibilities of incorporating photorefractive materials in integrated optical systems(6).

© 1987 Optical Society of America