Abstract
Photosensitivity can be induced in silica1 and Ge-doped silica2 by high energy ion implantation. The optical absorption induced in the ultraviolet region by the implantation can be substantially reduced by exposure to excimer laser light resulting in a polarisation dependent3 change in the refractive index at longer wavelengths. This refractive index change can be related to the variation in the absorption by Kramers-Kronig analysis4,5. We describe here, the result of a series of experiments undertaken to determine the effects of ion implantation on the photosensitivity of silica and Ge-doped silica planar waveguide structures.
© 1995 Optical Society of America
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