Abstract
The study of photorefractive properties of noncentrosymmetric semiconductor crystals (GaAs, InP, CdTe, CdS, CdSe) still attracts much attention at present because of possible applications for phase conjugation, amplification of coherent light beams, optical processing of information in near infrared (NR) etc.. Gallium Arsenide distinguishes among these materials as a crystal with well developed technology and with a large scope of information gathered on defect and impurity levels involved in space-charge redistribution [1].
© 1993 Optical Society of America
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