Abstract
In0.53Ga0.47As lattice matched to InP has been used extensively as the material for lightwave sources and detectors for optical communication. Here, we report the first use of InGaAs/InP multiple quantum wells (MQW) in the form of a nonlinear optical Fabry-Perot etalon for all-optical logic operations [1]. The MQW sample consists of 100 periods of alternating undoped thin layers of InGaAs (100 Å) and InP (150 Å) grown by chemical beam epitaxy [2] on InP substrate.
© 1987 Optical Society of America
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