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Conferences > PEO > 1991 > WE > WE8

Gain collapse in the photon transport transistor (PTT) above lasing threshold.

A. Chu, Y. Gigase, and B. Van Zeghbroeck

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Abstract

We measured the differential current gain (dIC/dIB) of the photon transport transistor (PTT) below and above threshold, and compared the result to a theoretical model. The device structure is shown in Fig. 1. It consists of a laser diode on top of a photodiode, with very tight optical coupling between the two devices. The laser is a GaAs/AlGaAs single quantum well ridge-GRINSCH structure. The photodiode is a GaAs/AlGaAs N-i-p diode with a 3 micron thick absorption region. Fabrication details of the device can be found in reference [1].

© 1991 Optical Society of America

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