Abstract
A traveling-wave electro-optic modulator fabricated from GaAs can, in principle, be fabricated having a modulation bandwidth exceeding 500 GHz. To approach such performance will require the elimination of not only velocity mismatch, which now limits the state-of-the-art to ~40 GHz,[1] but also modal dispersion of the microwave signal, radiation loss, free carrier absorption, and losses due to skin effect absorption.
© 1991 Optical Society of America
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