Abstract

The self-consistent Ensemble Monte Carlo (E.M.C.) method is used to study the dynamics of carriers generated by subpicosecond laser pulses in a Silicon n+/n/metal submicron Schottky diode. The E.M.C. model for the Schottky diode is the same presented in [1]. In this model the Poisson’s equation is solved using an accurate collocation method [2], which gives a very precise solution for the electric field E on the ohmic contact boundary. This allows us to determine the current injected through the ohmic contact using the relation J=n⁺μ_OE(0), where μ_O is the low field mobility in an n⁺ contact region. This is justified if the width of the n⁺ region is at least a few Debye lengths, so that we can consider the carriers at the ohmic contact boundary to be in equilibrium with the lattice. In this way we can model the depletion of carriers and fully account for the non charge neutral behavior of the Schottky barrier diode, keeping track of the carriers exiting the device and allocating the ones which are not reinjected on the metal side.

© 1985 Optical Society of America